A monolayer SnS 2 Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart
Hong Li; Tianshuo Duan; Xiaozhe Zhang; Fengbin Liu; Jing Lu
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Nanoscale
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d6nr02642g
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Cite this source
Hong Li; Tianshuo Duan; Xiaozhe Zhang; Fengbin Liu; Jing Lu. A monolayer SnS 2 Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart. Nanoscale. 2026. https://doi.org/10.1039/d6nr02642g