The III-Nitride Piezo-Acoustic Transistor: Design and Modeling of a Scalable Multi-Channel Stress-Modulated Power Device
H. Cui; D. Han; W. Schaffer; L. Graber; W. A. Doolittle; P. D. Yoder
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jestpe.2026.3735977
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Cite this source
H. Cui; D. Han; W. Schaffer; L. Graber; W. A. Doolittle; P. D. Yoder. The III-Nitride Piezo-Acoustic Transistor: Design and Modeling of a Scalable Multi-Channel Stress-Modulated Power Device. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2026. https://doi.org/10.1109/jestpe.2026.3735977