Geometric collapse engineering: a framework for sub-1·5 nm transistor design via environment-induced quantum state reduction
Lefliti Mohamed
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Electrical Systems and Information Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1186/s43067-026-00395-1
The original publisher provides the full text and its access options.
Cite this source
Lefliti Mohamed. Geometric collapse engineering: a framework for sub-1·5 nm transistor design via environment-induced quantum state reduction. Journal of Electrical Systems and Information Technology. 2026-09-08. https://doi.org/10.1186/s43067-026-00395-1