Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection
Long Ge; Haineng Bai; Yidi Teng; Xifeng Yang
- Published
- Publisher
- MDPI AG
- Journal / collection
- Crystals
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/cryst15060578
The original publisher provides the full text and its access options.
Cite this source
Long Ge; Haineng Bai; Yidi Teng; Xifeng Yang. Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection. Crystals. 2025-06-18. https://doi.org/10.3390/cryst15060578