Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Optimization of One-transistor (1T) DRAM Using Device Parameters-dependent Zero-temperature Coefficient Point

Kyung-Hee Kim; Kyeong-Min Kim; Yeong-Hwan Kim; Jong-Beom Im; Gyu-Ho Choi; In-Man Kang; Young-Jun Yoon

Published
Publisher
The Institute of Electronics Engineers of Korea
Journal / collection
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Research area
Semiconductors
Source type
Journal article
DOI
10.5573/jsts.2025.25.3.274

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Kyung-Hee Kim; Kyeong-Min Kim; Yeong-Hwan Kim; Jong-Beom Im; Gyu-Ho Choi; In-Man Kang; Young-Jun Yoon. Optimization of One-transistor (1T) DRAM Using Device Parameters-dependent Zero-temperature Coefficient Point. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 2025-06-30. https://doi.org/10.5573/jsts.2025.25.3.274

Download RIS