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Research literature / Conference paper

Single Event Effect of E-Mode Ga 2 O 3 Heterojunction Field Effect Transistor under Heavy Ion Irradiation

Ruixia Miao; Xiang Ji; Jiaqi Wang; Yun Yan

Published
Publisher
IEEE
Journal / collection
2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/isset66828.2025.11185020

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Ruixia Miao; Xiang Ji; Jiaqi Wang; Yun Yan. Single Event Effect of E-Mode Ga 2 O 3 Heterojunction Field Effect Transistor under Heavy Ion Irradiation. 2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET). 2025-07-24. https://doi.org/10.1109/isset66828.2025.11185020

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