Contact Length Scaling Enables Suppression of Contact Doping in Oxide Semiconductor Transistors
Chi-Hsin Huang; Koustav Jana; Samantha Afra van Rijs; H.-S. Philip Wong
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353528
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Cite this source
Chi-Hsin Huang; Koustav Jana; Samantha Afra van Rijs; H.-S. Philip Wong. Contact Length Scaling Enables Suppression of Contact Doping in Oxide Semiconductor Transistors. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353528