Evaluation of Drain Pocket Hetero Dielectric Double Gate TFET for Improving Low Power and High-Speed performance of transistor for various Analog, RF, and Digital Application
Ankit Kumar Singh; Sandeep Kumar; Arathy Rajeev; Pranshu Upadhyay
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 International Conference on Electrical and Electronics Engineering (ICE3)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ice367573.2025.11448934
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Cite this source
Ankit Kumar Singh; Sandeep Kumar; Arathy Rajeev; Pranshu Upadhyay. Evaluation of Drain Pocket Hetero Dielectric Double Gate TFET for Improving Low Power and High-Speed performance of transistor for various Analog, RF, and Digital Application. 2025 International Conference on Electrical and Electronics Engineering (ICE3). 2025-09-19. https://doi.org/10.1109/ice367573.2025.11448934