Characterization of Silicon-Germanium Heterojunction Bipolar Transistor from Cryogenic to High Temperatures for Extreme Environment Applications
Xiaodi Jin; Hao Lei; Hao Su; Yongchen Wang; Fanxun Cai; Xiao Fang; Hui Zhang; Yatao Peng
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE International Symposium on Circuits and Systems (ISCAS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iscas66217.2026.11562204
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Cite this source
Xiaodi Jin; Hao Lei; Hao Su; Yongchen Wang; Fanxun Cai; Xiao Fang; Hui Zhang; Yatao Peng. Characterization of Silicon-Germanium Heterojunction Bipolar Transistor from Cryogenic to High Temperatures for Extreme Environment Applications. 2026 IEEE International Symposium on Circuits and Systems (ISCAS). 2026-05-24. https://doi.org/10.1109/iscas66217.2026.11562204