Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoO x Nanoparticle Contact Doping
Han-Yi Huang; Chen-Han Chou; Hsin-Yuan Chiu; Yi-Wen Hsu; Qing-Yu Wu; Bo-Heng Liu; Chi-Chung Kei; Chao-Hsin Chien
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.5c01952
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Cite this source
Han-Yi Huang; Chen-Han Chou; Hsin-Yuan Chiu; Yi-Wen Hsu; Qing-Yu Wu; Bo-Heng Liu; Chi-Chung Kei; Chao-Hsin Chien. Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoO x Nanoparticle Contact Doping. ACS Applied Electronic Materials. 2025-12-23. https://doi.org/10.1021/acsaelm.5c01952