Spontaneous damage annealing reactions as a possible source of low energy excess in semiconductor detectors
Kai Nordlund; Fanhao Kong; Flyura Djurabekova; Matti Heikinheimo; Kimmo Tuominen; Antti Kuronen; Nader Mirabolfathi
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/p7s5-4qjw
The original publisher provides the full text and its access options.
Cite this source
Kai Nordlund; Fanhao Kong; Flyura Djurabekova; Matti Heikinheimo; Kimmo Tuominen; Antti Kuronen; Nader Mirabolfathi. Spontaneous damage annealing reactions as a possible source of low energy excess in semiconductor detectors. Physical Review Materials. 2025-11-24. https://doi.org/10.1103/p7s5-4qjw