First Demonstration of Double-Gated Ferroelectric Field-Effect-Transistor With TiO₂ Channel for Multi-Level Storage
Xujin Song; Chenxi Yu; Jiajia Zhang; Haozhang Yang; Shangze Li; Dijiang Sun; Haotong Zhu; Xiaomin Xiao; Zheng Zhou; Peng Huang; Xing Zhang; Xiaoyan Liu; Jinfeng Kang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2025.3581579
The original publisher provides the full text and its access options.
Cite this source
Xujin Song; Chenxi Yu; Jiajia Zhang; Haozhang Yang; Shangze Li; Dijiang Sun; Haotong Zhu; Xiaomin Xiao; Zheng Zhou; Peng Huang; Xing Zhang; Xiaoyan Liu; Jinfeng Kang. First Demonstration of Double-Gated Ferroelectric Field-Effect-Transistor With TiO₂ Channel for Multi-Level Storage. IEEE Electron Device Letters. 2025-08. https://doi.org/10.1109/led.2025.3581579