Simulation of a Floating Gate Transistor Based on a Graphene/h-BN/MoS2 van der Waals Heterojunction
R. M. Meftakhutdinov
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Russian Microelectronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063739725700052
The original publisher provides the full text and its access options.
Cite this source
R. M. Meftakhutdinov. Simulation of a Floating Gate Transistor Based on a Graphene/h-BN/MoS2 van der Waals Heterojunction. Russian Microelectronics. 2025-12. https://doi.org/10.1134/s1063739725700052