Room‐Temperature WSe 2 Impact Ionization Field‐Effect Transistor Based on a Stepwise Homojunction
Yue Chen; Wenrui Wei; Hailu Wang; Yuzhuo Bai; Tao Zhang; Kun Zhang; Shikun Duan; Yiye Yu; Tiange Zhao; Runzhang Xie; Peng Wang; Piotr Martyniuk; Zhen Wang; Weida Hu
- Published
- Publisher
- Wiley
- Journal / collection
- Small
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/smll.202412466
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Cite this source
Yue Chen; Wenrui Wei; Hailu Wang; Yuzhuo Bai; Tao Zhang; Kun Zhang; Shikun Duan; Yiye Yu; Tiange Zhao; Runzhang Xie; Peng Wang; Piotr Martyniuk; Zhen Wang; Weida Hu. Room‐Temperature WSe 2 Impact Ionization Field‐Effect Transistor Based on a Stepwise Homojunction. Small. 2025-04-07. https://doi.org/10.1002/smll.202412466