Modeling of 6T-SRAM Transistor Failure and Faults Caused by Injected Noise in Neural Networkst
Zhiyuan Li; Bo Sun; Xiaoyan Xie; Yue Sun
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/eurosime65125.2025.11006544
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Cite this source
Zhiyuan Li; Bo Sun; Xiaoyan Xie; Yue Sun. Modeling of 6T-SRAM Transistor Failure and Faults Caused by Injected Noise in Neural Networkst. 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). 2025-04-06. https://doi.org/10.1109/eurosime65125.2025.11006544