Characterization of Non-Conducting RF Hot-Carrier Stress Effects on Transistor Noise from 10 MHz to 26.5 GHz in 5-nm FinFETs
Guofu Niu; Xuewei Ding; Ergen Tao; Huilong Zhang; Weike Wang; Kimi Imura
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE 38th International Conference on Microelectronic Test Structures (ICMTS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/icmts69943.2026.11471729
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Cite this source
Guofu Niu; Xuewei Ding; Ergen Tao; Huilong Zhang; Weike Wang; Kimi Imura. Characterization of Non-Conducting RF Hot-Carrier Stress Effects on Transistor Noise from 10 MHz to 26.5 GHz in 5-nm FinFETs. 2026 IEEE 38th International Conference on Microelectronic Test Structures (ICMTS). 2026-03-23. https://doi.org/10.1109/icmts69943.2026.11471729