A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode
Lei Xie; Tao Zhang; Shengrui Xu; Huake Su; Hongchang Tao; Xiangdong Li; Longyang Yu; Zeyang Ren; Weidong Zhu; Yuan Gao; Xu Liu; Xinhao Wang; Yue Hao; Jincheng Zhang
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0316161
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Lei Xie; Tao Zhang; Shengrui Xu; Huake Su; Hongchang Tao; Xiangdong Li; Longyang Yu; Zeyang Ren; Weidong Zhu; Yuan Gao; Xu Liu; Xinhao Wang; Yue Hao; Jincheng Zhang. A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode. Applied Physics Letters. 2026-03-16. https://doi.org/10.1063/5.0316161