Sub-5 nm p-Type 1T/2H ZrCl2 Edge-Contact Field-Effect Transistor: A Phase-Engineered High-Performance Device
Wenrui Zhao; Jiexin Wang; Huan Wang; Xiaojie Liu; Haitao Yin
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c01115
The original publisher provides the full text and its access options.
Cite this source
Wenrui Zhao; Jiexin Wang; Huan Wang; Xiaojie Liu; Haitao Yin. Sub-5 nm p-Type 1T/2H ZrCl2 Edge-Contact Field-Effect Transistor: A Phase-Engineered High-Performance Device. ACS Applied Electronic Materials. 2026-08-11. https://doi.org/10.1021/acsaelm.6c01115