N-polar binary GaN/AlN single-crystal high-electron-mobility transistor structures on bulk AlN substrates by molecular beam epitaxy
Jashan Singhal; Naomi Pieczulewski; Len van Deurzen; Changkai Yu; Huili Grace Xing; David A. Muller; Debdeep Jena
- Published
- Publisher
- American Vacuum Society
- Journal / collection
- Journal of Vacuum Science & Technology A
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1116/6.0005413
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Cite this source
Jashan Singhal; Naomi Pieczulewski; Len van Deurzen; Changkai Yu; Huili Grace Xing; David A. Muller; Debdeep Jena. N-polar binary GaN/AlN single-crystal high-electron-mobility transistor structures on bulk AlN substrates by molecular beam epitaxy. Journal of Vacuum Science & Technology A. 2026-05-15. https://doi.org/10.1116/6.0005413