Beyond SiO2: A Review of Advanced High Dielectric Constant Passivation Layers for 4H-SiC Metal-Oxide-Semiconductor Devices
Junchen Deng; Hock Jin Quah
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c01054
The original publisher provides the full text and its access options.
Cite this source
Junchen Deng; Hock Jin Quah. Beyond SiO2: A Review of Advanced High Dielectric Constant Passivation Layers for 4H-SiC Metal-Oxide-Semiconductor Devices. ACS Applied Electronic Materials. 2026-09-21. https://doi.org/10.1021/acsaelm.6c01054