Transistor-to-GDS Reliability Analysis in Sub-3nm: Impact of Self-Heating and Aging on Timing
Swati Deshwal; Hadi Nour Eddine; Mahdi Benkhelifa; Albi Mema; Yogesh S. Chauhan; Hussam Amrouch
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/islped65674.2025.11261703
The original publisher provides the full text and its access options.
Cite this source
Swati Deshwal; Hadi Nour Eddine; Mahdi Benkhelifa; Albi Mema; Yogesh S. Chauhan; Hussam Amrouch. Transistor-to-GDS Reliability Analysis in Sub-3nm: Impact of Self-Heating and Aging on Timing. 2025 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED). 2025-08-06. https://doi.org/10.1109/islped65674.2025.11261703