Comparison of Different Approaches to Obtain High Voltage Gain with Interleaved Modular GaN Transistor based DC-DC Converter
Kaspars Kroičs; Kristiāns Gaspersons; Dan Hulea; Dimitar Arnaudov
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 66th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/rtucon67996.2025.11415077
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Cite this source
Kaspars Kroičs; Kristiāns Gaspersons; Dan Hulea; Dimitar Arnaudov. Comparison of Different Approaches to Obtain High Voltage Gain with Interleaved Modular GaN Transistor based DC-DC Converter. 2025 IEEE 66th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON). 2025-10-23. https://doi.org/10.1109/rtucon67996.2025.11415077