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Research literature / Conference paper

Innovative Performance of 6th Generation 11nm DRAM Cell Transistor for HBM4 Application

Shinwoo Jeong; Jiuk Jang; Chulmin Kim; Yuseok Choi; Youngwoo Son; Dongsoo Woo; Hoin Ryu; KyoSuk Chae; Byung-hyun Lee; Sangjoon Hwang

Published
Publisher
IEEE
Journal / collection
2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/vlsitechnologyandcir65830.2026.11577343

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Shinwoo Jeong; Jiuk Jang; Chulmin Kim; Yuseok Choi; Youngwoo Son; Dongsoo Woo; Hoin Ryu; KyoSuk Chae; Byung-hyun Lee; Sangjoon Hwang. Innovative Performance of 6th Generation 11nm DRAM Cell Transistor for HBM4 Application. 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2026-06-14. https://doi.org/10.1109/vlsitechnologyandcir65830.2026.11577343

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