Ternary Field‐Effect Transistor by Antiferroelectric Gating
Chuanlai Ren; Yingying Wu; Guangchao Zhao; Yihan Lei; Shuhua Ma; Boyuan Huang; Changjian Li; Mingqiang Huang; Jiangyu Li
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adma.75141
The original publisher provides the full text and its access options.
Cite this source
Chuanlai Ren; Yingying Wu; Guangchao Zhao; Yihan Lei; Shuhua Ma; Boyuan Huang; Changjian Li; Mingqiang Huang; Jiangyu Li. Ternary Field‐Effect Transistor by Antiferroelectric Gating. Advanced Materials. 2026-09-23. https://doi.org/10.1002/adma.75141