Intrinsically Stretchable Vertical Organic Electrochemical Transistor Featuring Sub-Nanometer-Roughness Electrodes for High Transconductance and Stretchability
Shang Lu; Jieming Wu; Bangzhe Zhang; Yueping Lai; Kun Qiao; Shisheng Chen; Xuyang Feng; Enbo Xue; Siqi Xiao; Liang-Wen Feng; Binghao Wang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Nano Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.nanolett.6c00353
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Cite this source
Shang Lu; Jieming Wu; Bangzhe Zhang; Yueping Lai; Kun Qiao; Shisheng Chen; Xuyang Feng; Enbo Xue; Siqi Xiao; Liang-Wen Feng; Binghao Wang. Intrinsically Stretchable Vertical Organic Electrochemical Transistor Featuring Sub-Nanometer-Roughness Electrodes for High Transconductance and Stretchability. Nano Letters. 2026-03-13. https://doi.org/10.1021/acs.nanolett.6c00353