(Invited) Development of Bipolar Semiconductor Devices for a III-N Material System
Luke Yates; James Loveless; Vincent Meyers; Anthony Rice; Jeffrey Steinfeldt; Hoang M Vuong; Mihai Negoita; Leonid Miroshnik; Andrew T. Binder; Michael L. Smith; Dakota Gray-Boneker; Jonathan J Wierer; Robert J. Kaplar
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Meeting Abstracts
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/ma2025-02351720mtgabs
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Cite this source
Luke Yates; James Loveless; Vincent Meyers; Anthony Rice; Jeffrey Steinfeldt; Hoang M Vuong; Mihai Negoita; Leonid Miroshnik; Andrew T. Binder; Michael L. Smith; Dakota Gray-Boneker; Jonathan J Wierer; Robert J. Kaplar. (Invited) Development of Bipolar Semiconductor Devices for a III-N Material System. ECS Meeting Abstracts. 2025-11-24. https://doi.org/10.1149/ma2025-02351720mtgabs