Dual-Gate-Controlled Ferroelectric Field-Effect Transistor Based on Sr 1.8 Bi 0.2 Nb 3 O 10 Perovskite Nanosheets for a Logic Memristor
Lele Ren; Minggao Zhang; Junhui Tan; Yunfan Wang; Bao-Wen Li
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.5c02594
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Cite this source
Lele Ren; Minggao Zhang; Junhui Tan; Yunfan Wang; Bao-Wen Li. Dual-Gate-Controlled Ferroelectric Field-Effect Transistor Based on Sr 1.8 Bi 0.2 Nb 3 O 10 Perovskite Nanosheets for a Logic Memristor. ACS Applied Electronic Materials. 2026-03-10. https://doi.org/10.1021/acsaelm.5c02594