Interdigitated Extended Gate Field Effect Transistor for pH Sensor Based on Porous Silicon Layer
Narin Atiwongsangthong
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 11th International Conference on Engineering, Applied Sciences, and Technology (ICEAST)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iceast64767.2025.11088146
The original publisher provides the full text and its access options.
Cite this source
Narin Atiwongsangthong. Interdigitated Extended Gate Field Effect Transistor for pH Sensor Based on Porous Silicon Layer. 2025 11th International Conference on Engineering, Applied Sciences, and Technology (ICEAST). 2025-05-06. https://doi.org/10.1109/iceast64767.2025.11088146