Experimental study of a microwave field effect transistor at cryogenic temperature
Novosibirsk State Technical University, Russian Federation; Dmitry I. Volkhin; Mariya D. Chernitskaya; Novosibirsk State Technical University, Russian Federation
- Published
- Publisher
- Novosibirsk State Technical University
- Journal / collection
- Proceedings of the Russian higher school Academy of sciences
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.17212/1727-2769-2025-3-5-17
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Cite this source
Novosibirsk State Technical University, Russian Federation; Dmitry I. Volkhin; Mariya D. Chernitskaya; Novosibirsk State Technical University, Russian Federation. Experimental study of a microwave field effect transistor at cryogenic temperature. Proceedings of the Russian higher school Academy of sciences. 2025-09-26. https://doi.org/10.17212/1727-2769-2025-3-5-17