A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor
Yulong Ding; Jun Jiang; Junzhong Liang; Xiaoyu Qin; Yanlin Ke; Juncong She; Yu Zhang; Shaozhi Deng
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Carbon Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s42823-025-00993-5
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Cite this source
Yulong Ding; Jun Jiang; Junzhong Liang; Xiaoyu Qin; Yanlin Ke; Juncong She; Yu Zhang; Shaozhi Deng. A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor. Carbon Letters. 2026-01-26. https://doi.org/10.1007/s42823-025-00993-5