Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration
Fatemeh Khorramshahi; Heorhii Bohuslavskyi; Anton Murros; Agata Piacentini; Michael Heuken; Max Lemme; Daniel Neumaier; Karl-Magnus Persson
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science in Semiconductor Processing
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mssp.2025.109336
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Cite this source
Fatemeh Khorramshahi; Heorhii Bohuslavskyi; Anton Murros; Agata Piacentini; Michael Heuken; Max Lemme; Daniel Neumaier; Karl-Magnus Persson. Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration. Materials Science in Semiconductor Processing. 2025-05. https://doi.org/10.1016/j.mssp.2025.109336