In situ interface engineering enabled high-performance InSnO thin-film transistor incorporating ultrathin Y2O3 layer
Zhenghao Duan; Shi Zong; Lei Xu; Zhengdao Xie; Wencheng Niu; Pengcheng Zeng; Lei Liao; Xingqiang Liu
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0307574
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Cite this source
Zhenghao Duan; Shi Zong; Lei Xu; Zhengdao Xie; Wencheng Niu; Pengcheng Zeng; Lei Liao; Xingqiang Liu. In situ interface engineering enabled high-performance InSnO thin-film transistor incorporating ultrathin Y2O3 layer. Applied Physics Letters. 2026-02-02. https://doi.org/10.1063/5.0307574