Enhancement-Mode Vertical (001) β-Ga 2 O 3 Power Transistor Enabled by Dual Ion Implantation
Anjing Luo; Gaofu Guo; Li Zhang; Tiwei Chen; Dengrui Zhao; Zhili Zou; Chunhong Zeng; Huanyu Zhang; Baoshun Zhang; Zhucheng Li; Xiaodong Zhang; Zhongming Zeng
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/wipda-asia63772.2025.11184029
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Cite this source
Anjing Luo; Gaofu Guo; Li Zhang; Tiwei Chen; Dengrui Zhao; Zhili Zou; Chunhong Zeng; Huanyu Zhang; Baoshun Zhang; Zhucheng Li; Xiaodong Zhang; Zhongming Zeng. Enhancement-Mode Vertical (001) β-Ga 2 O 3 Power Transistor Enabled by Dual Ion Implantation. 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). 2025-08-15. https://doi.org/10.1109/wipda-asia63772.2025.11184029