An Experimentally Verified Behavioral GaN HD-GIT Transistor Model
Ander Udabe; Igor Baraia-Etxaburu; David Garrido Diez
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Power Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tpel.2025.3532604
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Cite this source
Ander Udabe; Igor Baraia-Etxaburu; David Garrido Diez. An Experimentally Verified Behavioral GaN HD-GIT Transistor Model. IEEE Transactions on Power Electronics. 2025-05. https://doi.org/10.1109/tpel.2025.3532604