Investigation of parametric variation, gate engineering, RF parameters and interface traps in SOI L-body double gate tunnel field effect transistor
Deepjyoti Deb; Rupam Goswami; Ratul Kr. Baruah
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science and Engineering: B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mseb.2025.118127
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Cite this source
Deepjyoti Deb; Rupam Goswami; Ratul Kr. Baruah. Investigation of parametric variation, gate engineering, RF parameters and interface traps in SOI L-body double gate tunnel field effect transistor. Materials Science and Engineering: B. 2025-06. https://doi.org/10.1016/j.mseb.2025.118127