Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States
Wei Pan; D. Bruce Burckel; Catalin D. Spataru; Keshab R. Sapkota; Aaron J. Muhowski; Samuel D. Hawkins; John F. Klem; Layla S. Smith; Doyle A. Temple; Zachery A. Enderson; Zhigang Jiang; Komalavalli Thirunavukkuarasu; Li Xiang; Mykhaylo Ozerov; Dmitry Smirnov; Chang Niu; Peide D. Ye; Praveen Pai; Fan Zhang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Nano Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.nanolett.5c02180
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Cite this source
Wei Pan; D. Bruce Burckel; Catalin D. Spataru; Keshab R. Sapkota; Aaron J. Muhowski; Samuel D. Hawkins; John F. Klem; Layla S. Smith; Doyle A. Temple; Zachery A. Enderson; Zhigang Jiang; Komalavalli Thirunavukkuarasu; Li Xiang; Mykhaylo Ozerov; Dmitry Smirnov; Chang Niu; Peide D. Ye; Praveen Pai; Fan Zhang. Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States. Nano Letters. 2025-06-06. https://doi.org/10.1021/acs.nanolett.5c02180