Demonstration of Slanted-Bevel p-CrO X /n- β -Ga 2 O 3 Heterojunction-Field Effect Transistor With 512 MW/cm 2 Power Figure of Merit
Chenlu Wang; Yao Zhu; Sihan Sun; Chunxu Su; Hong Zhou; Jincheng Zhang; Yue Hao
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2026.3653036
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Cite this source
Chenlu Wang; Yao Zhu; Sihan Sun; Chunxu Su; Hong Zhou; Jincheng Zhang; Yue Hao. Demonstration of Slanted-Bevel p-CrO X /n- β -Ga 2 O 3 Heterojunction-Field Effect Transistor With 512 MW/cm 2 Power Figure of Merit. IEEE Electron Device Letters. 2026-03. https://doi.org/10.1109/led.2026.3653036