Accurate SPICE Model Development for 650V GaN Transistor Using 2-Port S-Parameter Measurements
Pengpeng Sun; Torbjörn Thiringer; Christian Fager; Gregor Lasser; Joachim Härsjö
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE Energy Conversion Conference Congress and Exposition (ECCE)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ecce58356.2025.11260170
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Cite this source
Pengpeng Sun; Torbjörn Thiringer; Christian Fager; Gregor Lasser; Joachim Härsjö. Accurate SPICE Model Development for 650V GaN Transistor Using 2-Port S-Parameter Measurements. 2025 IEEE Energy Conversion Conference Congress and Exposition (ECCE). 2025-10-19. https://doi.org/10.1109/ecce58356.2025.11260170