Gate-Tunable Polarization Gradient in 2D Polar Semiconductor for Synaptic Transistor
Nannan Zhang; Zhi Zhang; Rui Feng; Yiming Chen; Qiushang Li; YiCheng Yang; Meimei Jiang; Wenjie Zhao; Zhentao Zhu; Xiaoli Zhou; Zejun Li
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.5c07480
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Cite this source
Nannan Zhang; Zhi Zhang; Rui Feng; Yiming Chen; Qiushang Li; YiCheng Yang; Meimei Jiang; Wenjie Zhao; Zhentao Zhu; Xiaoli Zhou; Zejun Li. Gate-Tunable Polarization Gradient in 2D Polar Semiconductor for Synaptic Transistor. ACS Nano. 2025-06-26. https://doi.org/10.1021/acsnano.5c07480