Multi-Angle Single Event Effects Characterization of 100V GaN-on-Si Power Transistor
J. Brandt; R. Strittmatter
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2025 NSREC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/redw68988.2025.11534049
The original publisher provides the full text and its access options.
Cite this source
J. Brandt; R. Strittmatter. Multi-Angle Single Event Effects Characterization of 100V GaN-on-Si Power Transistor. 2025 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2025 NSREC). 2025-07-14. https://doi.org/10.1109/redw68988.2025.11534049