A Novel Read Disturbance-Free AND-Type Backside Ferroelectric Field-Effect Transistor (BF-FET) Array for Read-Intensive Artificial Intelligence
Jaejoong Jeong; Yeeun Kim; Youngkeun Park; Yeong Kwon Kim; Byung Chul Jang; Jong Kyung Park; Byung Jin Cho
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- AI & compute
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3656245
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Cite this source
Jaejoong Jeong; Yeeun Kim; Youngkeun Park; Yeong Kwon Kim; Byung Chul Jang; Jong Kyung Park; Byung Jin Cho. A Novel Read Disturbance-Free AND-Type Backside Ferroelectric Field-Effect Transistor (BF-FET) Array for Read-Intensive Artificial Intelligence. IEEE Transactions on Electron Devices. 2026-03. https://doi.org/10.1109/ted.2026.3656245