An InGaZnO Synaptic Transistor Using Titanium-Oxide Traps at Back Channel for Neuromorphic Computing
B. F. Yang; C. Zhang; Z. H. Zhang; D. Wang; Z. X. Wu; Y. W. Tong; P. T. Lai; C. Li; X. D. Huang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3558719
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Cite this source
B. F. Yang; C. Zhang; Z. H. Zhang; D. Wang; Z. X. Wu; Y. W. Tong; P. T. Lai; C. Li; X. D. Huang. An InGaZnO Synaptic Transistor Using Titanium-Oxide Traps at Back Channel for Neuromorphic Computing. IEEE Transactions on Electron Devices. 2025-06. https://doi.org/10.1109/ted.2025.3558719