An Investigation of a Double Surrounding Gate Indium-Arsenide Source Metal-Oxide-Semiconductor Field Effect Transistor (DSG-IASM-FET) for Low-Power Bio-Chemical Sensing Applications
Manas Kashyap; Divye Gandhi; Abhay Tiwari; Abhinav Goswami; Urvashi Bansal
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 5th International Conference in Power Engineering Applications (ICPEA)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/icpea65539.2025.11198297
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Cite this source
Manas Kashyap; Divye Gandhi; Abhay Tiwari; Abhinav Goswami; Urvashi Bansal. An Investigation of a Double Surrounding Gate Indium-Arsenide Source Metal-Oxide-Semiconductor Field Effect Transistor (DSG-IASM-FET) for Low-Power Bio-Chemical Sensing Applications. 2025 IEEE 5th International Conference in Power Engineering Applications (ICPEA). 2025-07-14. https://doi.org/10.1109/icpea65539.2025.11198297