Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V
Zhenxiang Yan; Zebing Fang; Yijie Lin; Wei Wang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2025.3596226
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Cite this source
Zhenxiang Yan; Zebing Fang; Yijie Lin; Wei Wang. Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V. IEEE Electron Device Letters. 2025-10. https://doi.org/10.1109/led.2025.3596226