Endogenous Overdrive Stabilization in Monolithic One-Transistor-One-Electrolyte-Gated Transistor Devices for Mitigating Nonlinear Synaptic Updates
Shaoming Fu; Zhijie Lin; Shan Hu; Sixin Chen; Jiahui Lin; Peicheng Jiao; Yanghui Liu; Chuan Liu; Xiaoci Liang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c01515
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Cite this source
Shaoming Fu; Zhijie Lin; Shan Hu; Sixin Chen; Jiahui Lin; Peicheng Jiao; Yanghui Liu; Chuan Liu; Xiaoci Liang. Endogenous Overdrive Stabilization in Monolithic One-Transistor-One-Electrolyte-Gated Transistor Devices for Mitigating Nonlinear Synaptic Updates. ACS Applied Electronic Materials. 2026-09-09. https://doi.org/10.1021/acsaelm.6c01515