GaN Photocathode-Based Photoelectron Beam for Semiconductor Metrology and Inspection: Concepts and Applications
Tomohiro Nishitani
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 39th International Vacuum Nanoelectronics Conference (IVNC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ivnc69421.2026.11660969
The original publisher provides the full text and its access options.
Cite this source
Tomohiro Nishitani. GaN Photocathode-Based Photoelectron Beam for Semiconductor Metrology and Inspection: Concepts and Applications. 2026 39th International Vacuum Nanoelectronics Conference (IVNC). 2026-07. https://doi.org/10.1109/ivnc69421.2026.11660969