Parameters optimization of the HEMT-transistor equivalent circuit
A.L. Khvalin; V.M. Doroshenko
- Published
- Publisher
- Publishing house "Radiotekhnika"
- Journal / collection
- Achievements of Modern Radioelectronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.18127/j20700784-202504-06
The original publisher provides the full text and its access options.
Cite this source
A.L. Khvalin; V.M. Doroshenko. Parameters optimization of the HEMT-transistor equivalent circuit. Achievements of Modern Radioelectronics. 2025-04-04. https://doi.org/10.18127/j20700784-202504-06