Spatially mapping phonon drag in ultrascaled 5-nm silicon nanowire field-effect transistor based on a quantum hydrodynamic formalism
Houssem Rezgui; Giovanni Nastasi; Manuel Marcoux; Vittorio Romano
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0279933
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Cite this source
Houssem Rezgui; Giovanni Nastasi; Manuel Marcoux; Vittorio Romano. Spatially mapping phonon drag in ultrascaled 5-nm silicon nanowire field-effect transistor based on a quantum hydrodynamic formalism. Journal of Applied Physics. 2025-10-01. https://doi.org/10.1063/5.0279933