Comparative analysis on nitride-based high electron mobility transistor (HEMT)
Jayanth Kumar Porala; Way Foong Lim
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Physica Scripta
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1402-4896/adf0b0
The original publisher provides the full text and its access options.
Cite this source
Jayanth Kumar Porala; Way Foong Lim. Comparative analysis on nitride-based high electron mobility transistor (HEMT). Physica Scripta. 2025-07-25. https://doi.org/10.1088/1402-4896/adf0b0