Oxygen Vacancy Dynamics in a-IGZO Synaptic Transistor
Hengyi Liang
- Published
- Publisher
- EWA Publishing
- Journal / collection
- Theoretical and Natural Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.54254/2753-8818/2026.33924
The original publisher provides the full text and its access options.
Cite this source
Hengyi Liang. Oxygen Vacancy Dynamics in a-IGZO Synaptic Transistor. Theoretical and Natural Science. 2026-05-25. https://doi.org/10.54254/2753-8818/2026.33924